공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-01-11
Lifecycle StatusObsolete (Last Updated: 1 week ago)
관련 부품
InfineonIRFS7430TRL7PP
MOSFET N-CH 40V 240A D2PAK / Trans MOSFET N-CH Si 40V 522A 7-Pin(6+Tab) D2PAK T/R
InfineonAUIRFS8409-7P
Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonAUIRFS8409-7TRL
MOSFET N-CH 40V 240A D2PAK-7 / Trans MOSFET N-CH Si 40V 522A Automotive 7-Pin(6+Tab) D2PAK T/R
STMicroelectronicsSTH410N4F7-6AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
STMicroelectronicsSTH320N4F6-6
In a Pack of 5, N-Channel MOSFET, 200 A, 40 V, 8-Pin H2PAK STMicroelectronics STH320N4F6-6
설명
유통업체에서 제공한 Infineon AUIRFSA8409-7P에 대한 설명입니다.
40V Single N-Channel HEXFET Power MOSFET in a D2PAK 7pin (TO-263 7pin) Package, D2PAK7P, RoHS
Infineon SCT
Trans MOSFET N-CH Si 40V 523A Automotive 7-Pin(6+Tab) D2PAK Tube
Mosfet, Aec-Q101, N-Ch, 40V, 360A, To263; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:40V; On Resistance Rds(On):500Μohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon AUIRFSA8409-7P
Benefits: Advanced Process Technology; New Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Terminals6
Technical
Continuous Drain Current (ID)360 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance690 µΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.975 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity50
Power Dissipation375 W
Rds On Max690 µΩ
Schedule B8541290080
Turn-Off Delay Time150 ns
Turn-On Delay Time21 ns
Dimensions
Height15.875 mm