공급망
Country of OriginGermany, Mainland China, Mexico, Taiwan
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-02-22
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFP2907PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de
VishaySIHG47N60E-E3
MOSFET, N CH, 600V, 47A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
설명
유통업체에서 제공한 Infineon AUIRFP4568-E에 대한 설명입니다.
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 150V 171A Automotive AEC-Q101 3-Pin(3+Tab) TO-247AD Tube
TUBE / Automotive G10.7 MOSFET 150V
Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
场效应管, MOSFET 单, 171A, 150V, 517W;
Infineon NMOS, Vds=150 V, 171 A, TO-247AC
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)171 A
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)150 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation517 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.9 mΩ
Package Quantity400
Power Dissipation517 W
Rds On Max5.9 mΩ