가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Vigor Components | AUIRF3808STRL | 1,633 | 3d | |||||||||
| QUARKTWIN TECHNOLOGY LTD | AUIRF3808STRL | 문의하기 | >1wk |
관련 부품
InfineonIRF3808STRLPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
InfineonIRF3808STRRPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
InfineonIRF3808SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
설명
유통업체에서 제공한 Infineon AUIRF3808STRL에 대한 설명입니다.
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)106 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.31 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation200 W
Rds On Max7 mΩ
Rise Time140 ns
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns