가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRF2804WL | 0 | 50 | Bulk | 20h | |||||||
| Avnet | AUIRF2804WL | 0 | 1K | 5h | ||||||||
| Microchip USA | AUIRF2804WL | 339 | 600 | Tube | 21h | |||||||
| Win Source | WS-AUIRF2804WL | 7,700 | 18 | 4h | ||||||||
| Worldway Electronics | AUIRF2804WL | 19,191 | 7 | Tube | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Wide Lead Package
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MOSFET, 40V, 195A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain
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N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
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Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon AUIRF2804WL에 대한 설명입니다.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Wide Lead Package
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 295A Automotive 3-Pin(3+Tab) TO-262WL Tube
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.978 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.8 mΩ
Package Quantity50
Power Dissipation300 W
Rds On Max1.8 mΩ
Rise Time241 ns
Turn-Off Delay Time71 ns
Turn-On Delay Time19 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm