공급망
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-07-03
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Infineon AIKW40N65DF5XKSA1에 대한 설명입니다.
IC DISCRETE 650V TO247-3 / IGBT Trench 650 V 74 A 250 W Through Hole PG-TO247-3-41
Infineon AIKW40N65DF5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247
Infineon's Discrete IGBT TRENCHSTOP 650V
TO-247-3-41 IGBT Transistors / Modules ROHS
IGBT TRENCH 650V 74A TO247-3-41
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.
Igbt, Single, 650V, 74A, To-247; Continuous Collector Current:74A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:250W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies AIKW40N65DF5XKSA1
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기술 사양
Physical
Number of Terminals3
Technical
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current74 A
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation250 W