Infineon 2N7002H6327XTSA2

Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23

Mosfet, N-Ch, 60V, 0.3A, Sot-23 Rohs Compliant: Yes |Infineon Technologies 2N7002H6327XTSA2

Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

Power MOSFET, N Channel, 60 V, 300 mA, 3 ohm, SOT-23, Surface Mount

MOSFET Devices; INFINEON; 2N7002H6327XTSA2; 60 V; 300 mA; 20 V; 500 mW

OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

The 2N7002 is an n-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

MOSFET, N CH, 60V, 0.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; P

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 500