PHOTODIODE, 880NM; Peak Wavelength:880nm; Forward Current If(AV):50mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:50°; Supply Voltage Range:1.7V; Operating Temperature Range:-40°C to +85°C; Diode Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Forward Current If:20mA; Forward Current If Max:20mA; Forward Voltage VF Max:1.7V; LED Colour:Infrared; Mounting Type:Through Hole; Package / Case:Radial; Power Dissipation Pd:100mW; Power Dissipation Pd:100mW; Wavelength Typ:880nm
SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.