Honeywell SDP8476-201

No Phototransistor Chip Silicon 935nm 2-Pin T-1

Sensors, Infrared Sensors, Reflective

.32MAPHOTOTRANSISTOR IR COMPON

The SDP8476 is an NPN silicon phototransistor with internal base-emitter shunt resistance. Transfer molding of this device in a clear T-1 plastic package assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. Distinguishing Feature: This device incorporates all of the desired features of a standard phototransistor with the advantage of low light immunity. The phototransistor switching occurs when the incident light increases above the threshold (knee point). When the light level exceeds the knee point of the device, it will function as a standard phototransistor.