Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Fall Time15 µs
Forward Current50 mA
Forward Voltage1.6 V
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature85 °C
Max Power Dissipation100 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output TypePhototransistor
Power Dissipation100 mW
Response Time15 µs
Reverse Breakdown Voltage3 V
Rise Time15 µs
Sensing Distance4.191 mm