Fuji 7MBR50VB-120-50

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

IC DIVIDER BY 2 24-BIT 16DIP

IGBT MODULE, 1.2KV, 50A

IGBT MODULE, 1.2KV, 50A; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; RoHS Compliant: Yes

IGBT MODULE, 1.2KV, 50A; Transistor Polarity: N Channel; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 280W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 24Pins; Operating Temperature Max: 150°C; Product Range: -; Current Ic @ Vce Sat: 75A; Current Ic Continuous a Max: 75A; Current Temperature: 25°C; External Depth: 62mm; External Length / Height: 20mm; External Width: 122mm; Fall Time tf: 450ns; Full Power Rating Temperature: 25°C; Isolation Voltage: 2.5kV; Junction Temperature Tj Max: 150°C; Module Configuration: Seven; No. of Transistors: 7; Power Dissipation Max: 360W; Pulsed Current Icm: 150A; Rise Time: 350ns; Termination Type: Screw; Voltage Vces: 1.2kV