Fuji 7MBR100U4B120-50

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

IC SUPERVISOR 1 CHANNEL 4X2SON

Igbt Module, 1.2Kv, 100A, 390W; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:2.85V; Power Dissipation:390W; Operating Temperature Max:150°C; Igbt Termination:Solder Pin; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |FUJI ELECTRIC 7MBR100U4B-120-50

IGBT, 7 PACK MOD, 1200V, 100A, M712; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 2.35V; Power Dissipation Pd: 390W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 24Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Module Configuration: Seven; Power Dissipation Max: 390W; Transistor Polarity: N Channel