공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2010-04-02
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
NXP SemiconductorsMRF6V4300NBR5
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
NXP SemiconductorsMRF6S18060NR1
GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V
설명
유통업체에서 제공한 NXP Semiconductors MRF6V3090NBR1에 대한 설명입니다.
RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
Transistor RF FET N-CH 110V 470MHz to 1215MHz 4-Pin TO-272WB T/R
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-272
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
RF ULTRA HIGH FREQUENCY BAND, N-
OPTOISOLTR 3.75KV 2CH TRANS 8-SO
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageTO-270-4
Contact PlatingTin
MountScrew, Surface Mount
Number of Pins5
Number of Terminals4
Weight1.911098 g
Technical
Drain to Source Voltage (Vdss)115 V
Frequency860 MHz
Gain21 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency860 MHz
Max Operating Temperature225 °C
Min Breakdown Voltage115 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power18 W
Test Current350 mA
Test Voltage50 V
Voltage Rating110 V
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책