onsemi FQP6N50
$ 0.938
Obsolete
가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQP6N50 | 193 | 18h | |||||||||
| Farnell | FQP6N50 | 0 | 1 | 4h | ||||||||
| Microchip USA | FQP6N50 | 476 | 3K | Tray | 11h | |||||||
| Win Source | WS-FQP6N50 | 7,700 | 5 | 19h | ||||||||
| Worldway Electronics | FQP6N50 | 21,018 | 7 | Tube | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
관련 부품
onsemiFDPF8N50NZU
N-Channel Power MOSFET, UniFETTM II, Ultra FRFETTM, 500 V, 6.5 A, 1.2 Ω, TO-220F
STMicroelectronicsSTP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
설명
유통업체에서 제공한 onsemi FQP6N50에 대한 설명입니다.
Power MOSFET, N Channel, 500 V, 5.5 A, 1.3 ohm, TO-220, Through Hole
MOSFET N-CH 500V 5.5A TO220-3
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
MOSFETs 500V N-Channel QFET
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 98
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance790 pF
Max Operating Temperature150 °C
Max Power Dissipation98 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation98 W
Rds On Max1.3 Ω
Rise Time65 ns
Turn-Off Delay Time35 ns
Voltage Rating (DC)500 V