공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-05-13
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2007-04-06
LTD Date2007-10-06
관련 부품
InfineonIRF8113TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF8113PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
설명
유통업체에서 제공한 onsemi FDS7779Z에 대한 설명입니다.
TRANS MOSFET P-CH 30V 16A 8SOIC
Power Field-Effect Transistor, 16A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 30V P-Channel PowerTrench
RS-232 XCVR WITH AUTO SHUTDOWN
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Terminals8
Technical
Continuous Drain Current (ID)16 A
Current Rating-16 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance7.2 mΩ
Drain to Source Voltage (Vds)-30 V
Fall Time55 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max7.2 mΩ
Rise Time9 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm