공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Toshiba2SA1163-GR(TE85L,F
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Toshiba2SA1312-BL(TE85L,F
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
Toshiba2SA1298-Y(TE85L,F)
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Diodes Inc.ZXTP19060CFFTA
Bipolar (BJT) Single Transistor, PNP, 60 V, 4 A, 1.5 W, SOT-23F, Surface Mount
설명
유통업체에서 제공한 Diodes Inc. ZXTP05120HFFTA에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.001A I(C), 120V V(BR)CEO, 2-Element, PNP, Silicon
ZXTP05120HFF Series 120 V 1 A PNP Medium Power Darlington Transistor SOT-23F
2V@ 2mA,2A PNP - Darlington 2W 10V 10¦ÌA 140V 120V 1A SOT-23F 3mm*1.7mm*1mm
DARLINGTON TRANSISTOR, PNP, SOT-23F; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:120V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:1.5W; DC Collector Current:2A; DC Current Gain hFE:14000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23F; Av Current Ic:1A; Case Style:SOT-23F; Current Ic @ Vce Sat:1A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic Continuous a:2A; Max Power Dissipation Ptot:1.5W; Max Voltage Vce Sat:1.7V; Min Gain Bandwidth ft:150MHz; Min Hfe:3000; No. of Transistors:1; Power Dissipation:1.5W; Pulsed Current Icm:4A; Termination Type:SMD; Transistor Type:Bipolar Darlington; Voltage Vcbo:140V
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight48.789529 mg
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Saturation Voltage900 mV
Collector Emitter Voltage (VCEO)120 V
Continuous Collector Current-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-10 V
hFE Min2000
Max Breakdown Voltage120 V
Max Collector Current1 mA
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel (TR)
PolarityPNP
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency150 MHz
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책