가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXTN25100DGQTA | 78 | 1 | Cut Tape | ||||||||
| DigiKey | ZXTN25100DGQTADICT-ND | 1,599 | 1 | Cut Tape | ||||||||
| Future Electronics | ZXTN25100DGQTA | 0 | 1K | Tape & Reel | ||||||||
| Avnet | ZXTN25100DGQTA | 0 | 1K | 3d | ||||||||
| Arrow Electronics | ZXTN25100DGQTA | 0 | 1K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
NexperiaBCP56-10TX
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
NexperiaBCP56-16TX
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 650 mW, SOT-223, Surface Mount
Diodes Inc.ZXTP4003GTA
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.BCP5616QTA
Single Bipolar Transistor, NPN, 80 V, 1 A, 2 W, SOT-223, 3 Pins, Surface Mount
설명
유통업체에서 제공한 Diodes Inc. ZXTN25100DGQTA에 대한 설명입니다.
TRANS NPN 100V 3A SOT223-3 / Bipolar (BJT) Transistor NPN 100 V 3 A 175MHz 1.2 W Surface Mount SOT-223-3
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
100V 1.2W 300@10mA,2V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
100V 12.8W 120@0.5A,2V 3A NPN SOT-223 Bipolar (BJT) ROHS
Trans GP BJT NPN 100V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
Trans, Npn, 100V, 3A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN25100DGQTA
500mV@ 600mA,3A NPN 5.3W 7V 50nA 180V 100V 3A SOT-223-3
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)100 V
hFE Min40
Max Breakdown Voltage100 V
Max Collector Current3 A
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Number of Elements1
Transition Frequency175 MHz