가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXTN19055DZTA | 1,470 | 1 | Cut Tape | ||||||||
| DigiKey | ZXTN19055DZCT-ND | 1,073 | 1 | Cut Tape | ||||||||
| TME | ZXTN19055DZTA | 0 | 1K | 15h | ||||||||
| Future Electronics | ZXTN19055DZTA | 0 | 1K | Tape & Reel | ||||||||
| Avnet | ZXTN19055DZTA | 0 | 1K | 17h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-30
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.ZXTN2010ZTA
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Diodes Inc. ZXTN19055DZTA에 대한 설명입니다.
Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
ZXTN19055DZ Series NPN 55 V 6 A Medium Power Transistor SMT - SOT-89-3
Trans GP BJT NPN 55V 6A 2100mW 4-Pin(3+Tab) SOT-89 T/R
Bipolar Transistors - BJT 20V NPN HIGH GAIN
Trans, Npn, 55V, 6A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN19055DZTA
250mV@ 600mA,6A NPN 2.1W 7V 50nA 150V 55V 6A SOT-89-3 1.6mm
50nA 55V 1.5W 20@10A,2V 6A 200MHz 170mV@6A,600mA NPN -55℃~+150℃@(Tj) SOT-89-4 Bipolar Transistors - BJT ROHS
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals6
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)150 V
Collector Emitter Breakdown Voltage55 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)55 V
Current Rating6 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min30
Max Breakdown Voltage55 V
Max Collector Current6 A
Max Frequency200 MHz
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation2.1 W
Transition Frequency200 MHz
Voltage Rating (DC)55 V
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책