공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
onsemiCPH3240-TL-E
Bipolar Transistor, (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3. ONSSPCDDENY1E7M;
Toshiba2SC3324-BL(TE85L,F
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
ROHMBC817-25T116
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.ZXTN19100CFFTA
Trans GP BJT NPN 100V 4.5A 16000mW 3-Pin SOT-23F T/R / TRANS NPN 100V 4.5A SOT23F-3
onsemiNSVBC817-16LT1G
TRANS NPN 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)
설명
유통업체에서 제공한 Diodes Inc. ZXTN04120HFFTA에 대한 설명입니다.
Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZXTN04120HFF Series 120 V 1 A NPN Medium Power Darlington Transistor SOT-23F
Trans Darlington NPN 120V 1A 3-Pin SOT-23F T/R Trans Darlington NPN 120V 1A 3-Pin SOT-23F T/R
DARLINGTON TRANSISTOR, NPN, SOT-23F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:120MHz; Power Dissipation Pd:1.5W; DC Collector Current:2A; DC Current Gain hFE:12000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23F; No. of Pins:3; Av Current Ic:1A; Collector Emitter Voltage Vces:1.5V; Current Ic @ Vce Sat:1A; Current Ic Continuous a Max:2A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:120MHz; Gain Bandwidth ft Typ:120MHz; Hfe Min:3000; No. of Transistors:1; Package / Case:SOT-23F; Power Dissipation Pd:1.5W; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:4A; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:140V
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)120 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min1000
Max Breakdown Voltage120 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency120 MHz
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책