MOSFET, COMP, H/BRIDE, 30V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:3.1A; Continuous Drain Current Id, P Channel:-2.3A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Half Bridge; On Resistance Rds(on), N Channel:0.12ohm; On Resistance Rds(on), P Channel:0.21ohm