공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-09-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
Diodes Inc.ZXMD63N02XTA
ZXMD63N02X Series 20 V 0.13 Ohm Dual N-Channel Enhancement Mode MOSFET -MSOP-8
InfineonIRF7504TRPBF
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET
설명
유통업체에서 제공한 Diodes Inc. ZXMD63C02XTA에 대한 설명입니다.
Trans MOSFET N/P-CH 20V 2.4A/1.7A 8-Pin MSOP T/R / MOSFET N/P-CH 20V 8-MSOP
N & P-Channel 20 V 0.13 Ohm Surface Mount Enhancement Mode MOSFET-MSOP-8
Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageMSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight139.989945 mg
Technical
Continuous Drain Current (ID)2.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time9.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation1.04 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation1.25 W
Rds On Max130 mΩ
Resistance270 mΩ
Rise Time9.6 ns
Turn-Off Delay Time16.4 ns
Turn-On Delay Time3.4 ns
Dimensions
Height950 µm
Length3.1 mm
Width3.1 mm