P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.045A I(D), 450V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:45mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):150ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:700mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-45mA; Current Temperature:25°C; Device Marking:ZVP0545A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:400mA; Termination Type:Through Hole; Voltage Vds Typ:-450V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V