공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Diodes Inc. ZTX855에 대한 설명입니다.
Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZTX855 Series NPN 5 A 150 V Silicon Planar Medium Power Transistor - TO-92-3
Trans GP BJT NPN 150V 4A 1200mW 3-Pin E-Line / TRANS NPN 150V 4A E-LINE
Trans, Npn, 150V, 4A, 200Deg C, 1.58W Rohs Compliant: Yes |Diodes Inc. ZTX855
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)250 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage260 mV
Collector Emitter Voltage (VCEO)150 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency90 MHz
Gain Bandwidth Product90 MHz
hFE Min100
Max Collector Current4 A
Max Frequency100 MHz
Max Operating Temperature200 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.2 W
Transition Frequency90 MHz
Voltage Rating (DC)150 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책