Diodes Inc. ZTX1051A

Bipolar (BJT) Transistor NPN 40V 4A 155MHz 1W Through Hole E-Line (TO-92 compati

Small Signal Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

210mV@ 100mA,4A NPN 1W 5V 10nA 150V 40V 4A TO-92 , 4.77mm*2.41mm*4.01mm

TRANSISTOR NPN 40V 5000MA TO92-3

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Typ Gain Bandwidth ft:155MHz; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C ;RoHS Compliant: Yes

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:210mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:155MHz; Hfe Min:300; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:10A; Termination Type:Through Hole; Voltage Vcbo:150V