관련 부품
Diodes Inc.ZVN3306ASTZ
625mW(Ta) 20V 2.4V@1mA 1N 60V 5¦¸@ 500mA,10V 270mA 35pF@18V TO-92-3 , 4.77mm*2.41mm*4.01mm
onsemi2N7000-D75Z
2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92
설명
유통업체에서 제공한 Diodes Inc. VN10LP에 대한 설명입니다.
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
Power Field-Effect Transistor, 0.38A I(D), 60V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AC
MOSFET, N E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Continuous Drain Current (ID)270 mA
Current Rating270 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance60 pF
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation625 mW
Rds On Max5 Ω
Resistance5 Ω
Threshold Voltage2.5 V
Voltage Rating (DC)60 V
Dimensions
Height4.01 mm
Lead Pitch1.27 mm
Length4.77 mm
Width2.41 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책