공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-10
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
ROHMMMST3906T146
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
설명
유통업체에서 제공한 Diodes Inc. MMDT3946LP4-7에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN and PNP, Silicon
MMDT39xx Series 40 V 200 mA Complementary NPN/PNP SMT Transistor - DFN-6
Trans GP BJT NPN/PNP 40V 0.2A 200mW 6-Pin DFN T/R
Bipolar Transistors - BJT BIPOLAR COMP.
Complementary, 40V, 0.2A, DFN1310-6,300MHz
Diodes Inc SCT
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product250 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Number of Elements1
PackagingTape & Reel
PolarityNPN, PNP
Transition Frequency300 MHz
Dimensions
Height350 µm
Length1.3 mm
Width1 mm