공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2021-03-15
LTD Date2021-03-15
관련 부품
Diodes Inc.DSS60600MZ4-13
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
설명
유통업체에서 제공한 Diodes Inc. DZT951-13에 대한 설명입니다.
Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 5A 4-Pin(3+Tab) SOT-223 T/R
Bipolar Transistors - BJT 1W -60V -5A
Compliant Surface Mount 3.7 mm 1.65 mm 6.7 mm 7.994566 mg 10 PNP
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-370 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current-5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product120 MHz
hFE Min10
Max Breakdown Voltage60 V
Max Collector Current5 A
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Transition Frequency120 MHz
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm