공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-24
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2021-03-15
LTD Date2021-03-15
관련 부품
ROHMSST3906T116
Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 350 mW, SOT-23, Surface Mount
ROHMDTA115GKAT146
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA144GKAT146
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PanasonicDSA2401R0L
Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)-20 V
Collector Emitter Breakdown Voltage20 V
Collector Emitter Saturation Voltage-330 mV
Collector Emitter Voltage (VCEO)20 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product215 MHz
hFE Min100
Max Breakdown Voltage20 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation600 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Transition Frequency215 MHz
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm