가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMT6008LFG-7 | 150,000 | 2K | 1d | ||||||||
| Newark | DMT6008LFG-7 | 721 | 1 | Cut Tape | ||||||||
| DigiKey | DMT6008LFG-7DICT-ND | 15,579 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | DMT6008LFG-7 | 20 | 1 | Bulk | 12h | |||||||
| Verical | DMT6008LFG-7 | 2,000 | 2K |
관련 부품
onsemiNVMFS5C670NLT1G
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
onsemiNTTFS5C670NLTAG
Single N-Channel Power MOSFET 60V, 70A, 6.5mΩ Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level
설명
유통업체에서 제공한 Diodes Inc. DMT6008LFG-7에 대한 설명입니다.
TRANSISTOR, N-CHANNEL, ENHANCEMENT MODE MOSFET, MSL 1, 60V, 49A TO 60A, SO-8
Mosfet, N-Ch, 60V, 60A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMT6008LFG-7
DMT6008LFG Series 60 V 13 A N-Channel Enhancement Mode Mosfet - PWDI3333-8
Trans MOSFET N-CH 60V 13A 8-Pin PowerDI 3333-8 T/R 2K
MOSFET N-CH 60V 13A PWRDI3333 / N-Channel 60 V 13A (Ta), 60A (Tc) 2.2W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 12±V VGS
Diodes Inc SCT
MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
Power Field-Effect Transistor, 13A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
XSTR, MOSFET, N-CHANNEL, 60V, 49A, RDSO
DiodesZetex NMOS, Vds=60 V, 60 A, PowerDI3333-8, , 8
MOSFET N-CH 60V 13A PWDI3333-8
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight72.007789 mg
Technical
Capacitance2.713 nF
Continuous Drain Current (ID)13 A
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.713 nF
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max7.5 mΩ
Rise Time4.4 ns
Schedule B8541290080
Turn-Off Delay Time24.4 ns
Turn-On Delay Time7 ns