공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-10
Lifecycle StatusProduction (Last Updated: 2 months ago)
관련 부품
Diodes Inc.DMG6601LVT-7
DiodesZetex N/P-Ch Enhancement MOSFET, Vds=30V, Id=2A/4.5A, TSOT-26, SMD, 6-Pin
설명
유통업체에서 제공한 Diodes Inc. DMN6040SVT-7에 대한 설명입니다.
N-Channel 60 V 44 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6
1.2W(Ta) 20V 3V@ 250µA 22.4nC@ 10 V 1individualNChannel 60V 44mΩ@ 4.3A,10V 5A 1.287nF@25V TSOT-26 SMD mount 2.9mm*1.6mm*1mm
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 44m Ω @ 4.3A, 10V 5A Ta -55°C~150°C TJ MOSFET N CH 60V 5A TSOT26
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTSOT
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.287 nF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.8 W
Rds On Max44 mΩ
Rise Time8.1 ns
Schedule B8541290080
Turn-Off Delay Time20.1 ns
Turn-On Delay Time6.6 ns
Dimensions
Height900 µm
Length2.9 mm
Width1.6 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책