공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-10
Lifecycle StatusProduction (Last Updated: 9 months ago)
관련 부품
Diodes Inc.DMP2130L-7
P-Channel 20 V 75 mOhm 7.3 nC Surface Mount Enhancement Mode Mosfet - SOT-23
VishaySI2307CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
VishaySI2301CDS-T1-E3
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
설명
유통업체에서 제공한 Diodes Inc. DMN3150L-7에 대한 설명입니다.
N-Channel MOSFET, 30V, 4.3A, SOT-23, for low-voltage power switching and load control
Power MOSFET, N Channel, 30 V, 3.8 A, 0.039 ohm, SOT-23, Surface Mount
Trans MOSFET N-CH 28V 3.8A Automotive 3-Pin SOT-23 T/R
DMN3150L Series 28 V 85 mOhm N-Channel Enhancement Mode Field Effect Transistor
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 1.4 W
1.4W(Ta) 12V 1.4V@ 250µA 8.2nC@ 10V，3.7nC@ 4.5V 1individualNChannel 28V 85mΩ@ 3.6A,4.5V 3.8A 305pF@5V SOT-23-3 SMD mount 2.9mm*1.3mm*1.03mm
MOSFET, N-CH, 30V, 3.8A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 920mV; Po
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vds)28 V
Element ConfigurationSingle
Fall Time3.49 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance305 pF
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.4 W
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time3.49 ns
Schedule B8541290080
Turn-Off Delay Time15.02 ns
Turn-On Delay Time1.14 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책