가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | DMN3033LDM-7DICT-ND | 235 | 1 | Cut Tape | ||||||||
| TME | DMN3033LDM-7 | 47 | 1 | 2h | ||||||||
| Future Electronics | DMN3033LDM-7 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | DMN3033LDM-7 | 0 | 3K | 3d | ||||||||
| Arrow Electronics | DMN3033LDM-7 | 0 | 3K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMP3056LDM-7
Mosfet Bvdss: 25V-30V Sot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP3056LDM-7
Diodes Inc.DMN3051LDM-7
Mosfet, N-Ch, 30V, 4A, Sot-26 Rohs Compliant: Yes |Diodes Inc. DMN3051LDM-7
설명
유통업체에서 제공한 Diodes Inc. DMN3033LDM-7에 대한 설명입니다.
N-Channel 30 V 33 mOhm Surface Mount Enhancement Mode Mosfet - SOT-26-6
Mosfet, N-Ch, 30V, 6.9A, Sot-26 Rohs Compliant: Yes |Diodes Inc. DMN3033LDM-7
Trans MOSFET N-CH 30V 6.9A Automotive 6-Pin SOT-26 T/R
2W(Ta) 20V 2.1V@ 250¦ÌA 13nC@ 10 V 1N 30V 33m¦¸@ 6.9A,10V 6.9A 755pF@10V SOT-26 3mm*1.6mm*1.1mm
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-26
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)6.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance755 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2 W
Rds On Max33 mΩ
Rise Time7 ns
Turn-Off Delay Time63 ns
Turn-On Delay Time11 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.6 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책