가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN2040LTS-13 | 1,785 | 5 | Cut Tape | ||||||||
| TME | DMN2040LTS-13 | 2,012 | 1 | 7h | ||||||||
| DigiKey | 31-DMN2040LTS-13CT-ND | 2,803 | 1 | Cut Tape | ||||||||
| Avnet | DMN2040LTS-13 | 0 | 2500 | 1d | ||||||||
| RS (Formerly Allied Electronics) | DMN2040LTS-13 | 0 | 125 | Bulk | 1d |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Diodes Inc. DMN2040LTS-13에 대한 설명입니다.
Trans MOSFET N-CH 20V 6.7A Automotive 8-Pin TSSOP T/R
Mosfet Bvdss: 8V~24V Tssop-8 T&r 2.5K Rohs Compliant: Yes |Diodes Inc. DMN2040LTS-13
DMN2040 Series 20 V 890 mW 6.7 A Dual N-Channel MOSFET TSSOP-8
Dual MOSFET, N Channel, 20 V, 20 V, 6.7 A, 6.7 A, 0.019 ohm
MOSFET, DUAL, N-CH, 20V, 6.7A;
890mW 12V 1.2V@ 250¦ÌA 5.2nC@ 4.5V 2N 20V 26m¦¸@ 6A,4.5V 6.7A 570pF@10V TSSOP-8 3.03mm*4.43mm*1.2mm
DUAL N-CHANNEL ENHANCEMENT MOSFET TSSOP8
Power Field-Effect Transistor, 6.7A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGS
Diodes Inc SCT
MOSFET ENHANCE MODE MOSFET DUAL N-CHAN
场效应管, MOSFET, 双路, N沟道, 20V, 6.7A;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTSSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight157.991892 mg
Technical
Continuous Drain Current (ID)6.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time6.1 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance570 pF
Max Operating Temperature150 °C
Max Power Dissipation890 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation890 mW
Rds On Max26 mΩ
Rise Time13.5 ns
Turn-Off Delay Time19.8 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.025 mm
Length4.5 mm
Width3.1 mm