공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-10-17
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
VishaySI8806DB-T2-E1
VISHAY SI8806DB-T2-E1 MOSFET Transistor, N Channel, 3.9 A, 12 V, 0.035 ohm, 4.5 V, 400 mV
설명
유통업체에서 제공한 Diodes Inc. DMN1045UFR4-7에 대한 설명입니다.
Mosfet, N-Ch, 12V, 3.2A, X2-Dfn1010 Rohs Compliant: Yes |Diodes Inc. DMN1045UFR4-7
Trans MOSFET N-CH 12V 3.2A 3-Pin X2-DFN T/R
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss
MOSFET BVDSS: 8V~24V X2-DFN1010-3 T&R 3K
N-Channel Mosfet, 12V VDS, 8±V VGS
Diodes Inc SCT
MOSFET, N-CH, 12V, 3.2A, X2-DFN1010;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Resistance64 mΩ
Drain to Source Voltage (Vdss)12 V
Input Capacitance375 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max45 mΩ
Schedule B8541290080