가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | DMG5802LFX-7 | 0 | 3K | 12h | ||||||||
| Avnet | DMG5802LFX-7 | 0 | 3K | 5d | ||||||||
| Arrow Electronics | DMG5802LFX-7 | 0 | 3K | |||||||||
| Mouser | 621-DMG5802LFX-7 | 16 | 1 | Tape & Reel | ||||||||
| Component Stockers USA | DMG5802LFX-7 | 280,603 | >1wk |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-03-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMP2039UFDE-7
Mosfet, P-Ch, 25V, 6.7A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMP2039UFDE-7
Diodes Inc.DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E / Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R
설명
유통업체에서 제공한 Diodes Inc. DMG5802LFX-7에 대한 설명입니다.
Transistor MOSFET Array Dual N-CH 24V 6.5A 6-Pin WDFN5020 T/R
Trans MOSFET N-CH 24V 6.5A 6-Pin DFN EP T/R / MOSFET 2N-CH 24V 6.5A 6DFN
Dual N-Channel 24 V 20 mOhm 14.5 nC 0.98 W Silicon SMT Mosfet - WDFN-6
Small Signal Field-Effect Transistor, 5.6A I(D), 24V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Dual N-Ch Enhancement Mode MOSFET DFN6
N-Channel Mosfet, 24V VDS, 12±V VGS
Diodes Inc SCT
980mW 12V 1.5V@ 250¦ÌA 31.3nC@ 10V 2N 24V 15m¦¸@ 6.5A,4.5V 6.5A 1.0664nF@15V WDFN-50206 2mm*5mm*800¦Ìm
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageDFN EP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage24 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)24 V
Fall Time22.45 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.0664 nF
Max Operating Temperature150 °C
Max Power Dissipation980 mW
Min Breakdown Voltage24 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation980 mW
Rds On Max15 mΩ
Rise Time13.43 ns
Schedule B8541210080
Turn-Off Delay Time32.18 ns
Turn-On Delay Time3.69 ns
Dimensions
Height800 µm
Length5.1 mm
Width2.1 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책