가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMG1012T-7 | 120,000 | 3K | 1d | ||||||||
| Newark | DMG1012T-7 | 1,061,515 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DMG1012T-7 | 324,000 | 3K | |||||||||
| Verical | DMG1012T-7 | 222,000 | 3K | |||||||||
| Future Electronics | DMG1012T-7 | 423,000 | 3K | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-26
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMP21D0UT-7
P-Channel 20 V 495 mOhm 1.54 nC Surface Mount Enhancement Mode Mosfet - SOT-523
설명
유통업체에서 제공한 Diodes Inc. DMG1012T-7에 대한 설명입니다.
Transistor: N-MOSFET; unipolar; 20V; 0.63A; 0.4ohm; 0.28W; -55+150 deg.C; SMD; SOT523; AEC-Q100
Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R
N-Channel 20 V 400 mOhm Surface Mount Enhancement Mode Mosfet - SOT-523
Power MOSFET, N Channel, 20 V, 630 mA, 0.4 ohm, SOT-523, Surface Mount
N-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-523
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight2.012816 mg
Technical
Continuous Drain Current (ID)630 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time12.3 ns
Gate to Source Voltage (Vgs)6 V
Input Capacitance60.67 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation280 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation280 mW
Rds On Max400 mΩ
Resistance400 MΩ
Rise Time7.4 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time26.7 ns
Turn-On Delay Time5.1 ns
Dimensions
Height900 µm
Length1.7 mm
Width850 µm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책