가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DDTD113EC-7-F | 1,595 | 5 | Cut Tape | ||||||||
| DigiKey | DDTD113EC-7-FDICT-ND | 5,458 | 1 | Cut Tape | ||||||||
| TME | DDTD113EC-7-F | 0 | 1 | 13h | ||||||||
| Avnet | DDTD113EC-7-F | 0 | 3K | 3d | ||||||||
| Arrow Electronics | DDTD113EC-7-F | 0 | 3K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-05-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DDTC113ZCA-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 1 kohm, 10 kohm
Diodes Inc.DDTC123YCA-7-F
DDTC123CA Series 50 V 100 mA NPN Digital Transistor Surface Mount - SOT-23-3
Diodes Inc.DDTD123EC-7-F
DDTD Series 50 V 500 mA NPN Pre-Biased Surface Mount Transistor - SOT-23-3
onsemiFJV3102RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJV3105RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Diodes Inc. DDTD113EC-7-F에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
300mV@ 2.5mA,50mA NPN - Pre-Biased 200mW 500nA 50V 500mA SOT-23-3 3.05mm*1.4mm*1mm
DDTC Series 50 V 500 mA 200 mW NPN Pre-Biased Small Signal Transistor - SOT-23
Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R
Rf Transistor, 50V, 0.5A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DDTD113EC-7-F
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current500 mA
Element ConfigurationSingle
hFE Min33
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Transition Frequency200 MHz
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm