관련 부품
Diodes Inc.DDC114EH-7
Trans Digital BJT NPN 50V 100mA 150mW 6-Pin SOT-563 T/R / TRANS 2NPN PREBIAS 0.15W SOT563
Diodes Inc.DCX114EH-7
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Diodes Inc.DDA114EH-7
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
ToshibaRN4902FE,LF(CT
Transistor Silicon PNP-NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
설명
유통업체에서 제공한 Diodes Inc. DCX100NS-7에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 100mA 6-Pin SOT-563 T/R
Bipolar Transistors - Pre-Biased 150mW R1+/-R2 R3=R4 Dual Complementary
TRANS NPN/PNP PREBIAS SOT563
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-563
MountSurface Mount
Number of Terminals6
Weight3.005049 mg
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Element ConfigurationDual
hFE Min30
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PolarityNPN, PNP
Transition Frequency250 MHz
Dimensions
Height600 µm
Length1.6 mm
Width1.2 mm