가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | BC846AW-7-F | 2,660 | 1 | 20h | ||||||||
| Future Electronics | BC846AW-7-F | 0 | 3K | Tape & Reel | ||||||||
| Avnet | BC846AW-7-F | 0 | 3K | 2d | ||||||||
| Arrow Electronics | BC846AW-7-F | 0 | 3K | |||||||||
| Farnell | BC846AW-7-F | 30 | 5 | Cut Tape | 22h |
관련 부품
Diodes Inc.BC846BW-7-F
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 200 mW, SOT-323, Surface Mount
ROHMDTC144TUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJX3001RTF
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323
onsemiFJX3003RTF
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323
ROHMDTC113ZUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJX3007RTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Diodes Inc. BC846AW-7-F에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
BC846 Series 65 V 100 mA SMT NPN General Purpose Transistor - SOT-323
Trans, Npn, 65V, 0.1A, 150Deg C, 0.2W Rohs Compliant: Yes |Diodes Inc. BC846AW-7-F
Bipolar Transistors - BJT NPN BIPOLAR
General Purpose Transistors NPN Ic=100mA Vceo=65V hfe=110~220 P=200mW SOT323
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)65 V
Continuous Collector Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min110
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency300 MHz
TypeGeneral Purpose
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm