공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2010-02-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-09-15
LTD Date2022-03-15
관련 부품
Diodes Inc.APT27HZTR-G1
Small Signal Bipolar Transistor, 0.8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
onsemiKSC2310YBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 10mA 5V 50mA 800mW 100MHz
설명
유통업체에서 제공한 Diodes Inc. APT27ZTR-G1에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces
Trans GP BJT NPN 450V 0.8A 3-Pin TO-92 Tape Ammo
NPN, 700V, 0.8A, TO92, 0.8W
Diodes Inc SCT
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Terminals3
Weight453.59237 mg
Technical
Collector Emitter Breakdown Voltage450 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)450 V
Continuous Collector Current800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min6
Max Breakdown Voltage450 V
Max Collector Current800 mA
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Box (TB)
PolarityNPN
Power Dissipation800 mW