공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-03
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2020-04-07
LTD Date2020-04-07
관련 부품
onsemiKSE13003H3ASTU
Tube Through Hole NPN Single Bipolar (BJT) Transistor 19 @ 500mA 2V 1.5A 20W 4MHz
onsemiFJE3303H1TU
Tube Through Hole NPN Single Bipolar (BJT) Transistor 8 @ 500mA 2V 1.5A 20W 4MHz
설명
유통업체에서 제공한 Diodes Inc. APT13003DU-G1에 대한 설명입니다.
Small Signal Bipolar Transistor, 1.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W
Trans GP BJT NPN 450V 1.5A 3-Pin TO-126 Bulk
450V NPN HIGH VOLTAGE POWER TRANSISTOR,T
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-126
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage450 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)450 V
Continuous Collector Current1.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Fall Time350 ns
Gain Bandwidth Product4 MHz
hFE Min5
Max Collector Current1.5 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Transition Frequency4 MHz