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설명
유통업체에서 제공한 Infineon IRLML6402TRPBF에 대한 설명입니다.
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.065Ohm;ID -3.7A;Micro3;PD 1.3W;VGS +/-12V
MOSFET P-CH 20V 3.7A SOT23 P-Channel 20 V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
Infineon Technologies P-channel HEXFET power MOSFET, 20 V, 3.7 A, SOT-23, IRLML6402TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
P CHANNEL MOSFET, -20V, 3.7A SOT-23; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A;
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R
HEXFET Power MOSFET Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.7A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:Micro3 ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES (ASIA
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- Infineon Technologies Americas Corp
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.7 A
Current Rating-3.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time381 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance633 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-550 mV
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time48 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-550 mV
Turn-Off Delay Time588 ns
Turn-On Delay Time350 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Length3.0226 mm