관련 부품
InfineonIPA083N10N5XKSA1
MOSFET N-CH 100V 44A TO220-FP N-Channel 100 V 44A (Tc) 36W (Tc) Through Hole PG-TO220-FP
STMicroelectronicsSTF100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Infineon IPA100N08N3G에 대한 설명입니다.
Trans MOSFET N-CH 80V 40A 3-Pin(3+Tab) TO-220FP Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.9pF 50volts C0G +/-0.05pF
Power Field-Effect Transistor, 40A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
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- Infineon Technologies
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- IR/INFINEON
- INFINEON/IR
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- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES (ASIA
- INFINEON TECHNO
- Infineon Technologies Americas Corp
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)40 A
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation35 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance10 mΩ
Package Quantity500
PackagingRail/Tube
Power Dissipation35 W
Rds On Max10 mΩ
Rise Time30 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책