サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.32.00.32
Introduction Date2015-01-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-06-17
LTD Date2021-09-17
関連部品
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM | IC SRAM 2M PARALLEL 48MINIBGA
ISSIIS42S16400J-7BLI
IC DRAM 64M PARALLEL 54TFBGA / 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
16Mb £¨1M x 16£© 1Mx16 3V 70mA 3.6V 143MHz Parallel 16bit BGA , 10.1mm*6.4mm*850¦Ìm
説明
Winbond W971GG8SB-25の詳細は販売業者から提供されます。
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin WBGA
DDR2 DRAM, 128MX8, 0.4ns, CMOS, PBGA60
IC DRAM 1GBIT PARALLEL 60WBGA
メーカーの別名
Winbondは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Winbond は以下の名前でも知られているかもしれません：
- Winbond Electronics
- ISD
- WIN
- WINBON
- WINBOND ELECTRONICS CORP
- Winbond Electronics Corporation
- WINB
- WINDBOND
- WINDOND
- INFORMATION STORAGE DEVICES
- Winbond Elec
- WINBND
- WINBOD
- WinbondPb
- WINBOND/PBF
- WINBOND ELECTRO
- WINBOUND
- Winbond Electronics Corporation America
- WINBOND Semiconductor
- WINBONDELE
- WINBNDELEC
- WINBOND ELECT CORP
- WINBOn semiD
- WINBONB
- Winbond Corp
技術仕様
Physical
Case/PackageTFBGA
Number of Terminals60
Technical
Access Time400 ps
InterfaceParallel
Max Operating Temperature85 °C
Max Supply Voltage1.9 V
Memory TypeDDR2 SDRAM, RAM
Min Operating Temperature0 °C
Min Supply Voltage1.7 V
Number of Circuits1
Number of Ports1
Operating Supply Voltage1.8 V
Schedule B8542320015
Dimensions
Height - Seated (Max)1.2 mm
Length12.5 mm
Terminal Pitch800 µm
Width8 mm