説明
Vishay VS-50MT060WHTAPBFの詳細は販売業者から提供されます。
VISHAY VS-50MT060WHTAPBF IGBT Single Transistor, 114 A, 2.3 V, 658 W, 600 V, MTP, 12 Pins
Trans IGBT Module N-CH 600V 114A 658000mW 10-Pin MTP
Insulated Gate Bipolar Transistor, 114A I(C), 600V V(BR)CES, N-Channel
IGBT Modules 600 Volt 50 Amp Half Bridge
IGBT MODULE 600V 114A 658W MTP
SINGLE IGBT, 600V, 114A; Transistor Type:IGBT Module; DC Collector Current:114A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:658W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; No. of Pins:12;RoHS Compliant: Yes
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技術仕様
Physical
Case/PackageModule
MountChassis Mount, Screw
Number of Pins12
Number of Terminals12
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationDual
InputStandard
Input Capacitance7.1 nF
Max Collector Current114 A
Max Operating Temperature150 °C
Max Power Dissipation658 W
Min Operating Temperature-40 °C
NTC ThermistorNo
Number of Elements2
Power Dissipation658 W
Schedule B8541290080
Dimensions
Height16 mm
Length63.5 mm
Width33 mm