サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-02-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
説明
Vishay SUD45P03-10の詳細は販売業者から提供されます。
Power Field-Effect Transistor, 15A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):0.018ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252 ;RoHS Compliant: No
MOSFET, P, LOGIC, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:-15A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:100mohm; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:4W; Pulse Current Idm:30A; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V
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技術仕様
Physical
Case/PackageTO-252
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)15 A
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vds)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
Power Dissipation4 W
Resistance100 mΩ
Rise Time375 ns
TerminationSMD/SMT
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm