価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SQM110N05-06L_GE3CT-ND | 773 | 1 | Cut Tape | ||||||||
| TTI | SQM110N05-06L-GE3 | 0 | 800 | Tape & Reel | 3d | |||||||
| Future Electronics | SQM110N05-06L_GE3 | 0 | 800 | Tape & Reel | ||||||||
| Avnet | SQM110N05-06L_GE3 | 0 | 800 | 6h | ||||||||
| TTI Europe | SQM110N05-06L/GE3 | 0 | 800 | Tape & Reel | 3d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
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説明
Vishay SQM110N05-06L_GE3の詳細は販売業者から提供されます。
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
157W(Tc) 20V 2.5V@ 250¦ÌA 110nC@ 10 V 1N 55V 6m¦¸@ 30A,10V 110A 4.44nF@25V D2PAK,TO-263 4.83mm
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) TO-263
Power Field-Effect Transistor, 110A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,N CH,W DIODE,55V,110A,TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.44 nF
Max Operating Temperature175 °C
Max Power Dissipation157 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation157 W
Rds On Max6 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm