サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-08
Lifecycle StatusNRND (Last Updated: 4 months ago)
関連部品
VishaySI7456DDP-T1-GE3
VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
InfineonIRFR540ZTRPBF
Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 35A DPAK
説明
Vishay SIS890DN-T1-GE3の詳細は販売業者から提供されます。
N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 T/R
Power Field-Effect Transistor, 30A I(D), 100V, 0.0235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
3.7W(Ta),52W(Tc) 20V 3V@ 250¦ÌA 29nC@ 10 V 1N 100V 23.5m¦¸@ 10A,10V 30A 802pF@50V PPAK-1212-8 3.05mm*3.05mm*1.07mm
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
メーカーの別名
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- VISHAY INTERTECHNOLOGY ASIA PT
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技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23.5 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance802 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation3.7 W
Rds On Max23.5 mΩ
Resistance23.5 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time16 ns
Turn-On Delay Time9 ns
Dimensions
Height1.17 mm
Length3.4 mm
Width3.4 mm