Vishay SIS443DN-T1-GE3の詳細は販売業者から提供されます。
Power MOSFET, P Channel, 40 V, 35 A, 0.0097 ohm, PowerPAK 1212, Surface Mount
P-FET, 40V, 13.3A, 3.7W, -2.3V VGS, 16mOhm, PowerPAK 1212-8
Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R
Avnet Japan
MOSFET -40V .0117OHM@10V 35A P-CH G-III
Small Signal Field-Effect Transistor, 0.035A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, P沟道, -40V, -35A, 150度 C, 52W;
MOSFET P-CH 40V 35A PPAK 1212-8
N-Ch PowerPAK1212 BWL 80V 19.5mohm@10V
RS APAC
P-CH 40V 35A 9,7mOhm PPAK1212-8
MOSFET, P-CH, 40V, 35A, PPAK1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0097ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited