サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-02-26
LTD Date2019-08-26
関連部品
説明
Vishay SIR644DP-T1-GE3の詳細は販売業者から提供されます。
SiR644DP Series 40 V 60 A SMT N-Channel MOSFET - PowerPAK® SO-8
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 60A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 40V 2.7mOhm@60A 60A N-CH
MOSFET, N CH, 40V, 60A, POWERPAK SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -;
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max2.7 mΩ
Rise Time5 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time13 ns