価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | SIR438DP-T1-GE3 | 3,000 | 3K | |||||||||
| Arrow Electronics | SIR438DP-T1-GE3 | 3,000 | 3K | |||||||||
| DigiKey | SIR438DP-T1-GE3CT-ND | 189 | 1 | Cut Tape | ||||||||
| TME | SIR438DP-T1-GE3 | 0 | 3K | 5h | ||||||||
| TTI | SIR438DP-T1-GE3 | 0 | 3K | Tape & Reel | 14h |
関連部品
InfineonIRFH4210TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
VishaySI7658ADP-T1-GE3
Single N-Channel 30 V 0.0022 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
VishaySI4136DY-T1-GE3
Prices include import duty and tax. MOSFET Transistor, N Channel, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V;
説明
Vishay SIR438DP-T1-GE3の詳細は販売業者から提供されます。
Single N-Channel 25 V 1.8 mOhm 105 nC 83 W SMT Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 25V 40A 8-Pin PowerPAK SO T/R
Power Field-Effect Transistor, 40A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
5.4W(Ta),83W(Tc) 20V 2.3V@ 250¦ÌA 105nC@ 10 V 1N 25V 1.8m¦¸@ 20A,10V 60A 4.56nF@10V 6.15mm*5.15mm*1.04mm
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.56 nF
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
Power Dissipation5.4 W
Rds On Max1.8 mΩ
Rise Time21 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time37 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm